Wednesday, September 3, 2014

UPDATE: Graphene depsoited by Xi'an Jiaotong University in a Picosun PEALD reactor

Graphene depsoited by Xi'an Jiaotong University in a Picosun ALD reactor.  A whole new method for the synthesis of graphene at low temperatures by means of remote plasma-enhanced atomic layer deposition (PEALD) is developed in this work and reported in the paper below.

Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
Yijun Zhang,   Wei Ren,   Zhuangde Jiang,   Shuming Yang,   Weixuan Jing,   Peng Shi, Xiaoqing Wu and Zuo-Guang Ye 
J. Mater. Chem. C, 2014,2, 7570-7574
 

Graphene has attracted a great deal of research interest owing to its unique properties and many potential applications. Chemical vapor deposition has shown some potential for the growth of large-scale and uniform graphene films; however, a high temperature (over 800 °C) is usually required for such growth. A whole new method for the synthesis of graphene at low temperatures by means of remote plasma-enhanced atomic layer deposition is developed in this work. Liquid benzene was used as a carbon source. Large graphene sheets with excellent quality were prepared at a growth temperature as low as 400 °C. The atomic structure of the graphene was characterized by means of aberration-corrected transmission electron microscopy. Hexagonal carbon rings and carbon atoms were observed, indicating a highly crystalline structure of the graphene. These results point to a new technique for the growth of high-quality graphene for potential device applications.

UPDATE Press release from PICOSUN: Picosun Oy, the leading manufacturer of high quality Atomic Layer Deposition (ALD) equipment for global industries, reports the successful low temperature deposition of graphene, enabled by its PICOPLASMA™ remote plasma source system.
 
Only 400 oC deposition temperature, now demonstrated by an elite research group led by Prof. Wei Ren and Prof. Zuo-Guang Ye at Xi'an Jiaotong University, China, does not only widen the variety of graphene's applications but the employment of ALD, already a well-known and widely used method in the semiconductor industry markedly facilitates the material's penetration into modern micro- and nanoelectronics manufacturing.
 
"Groundbreaking results like the ones just obtained at Xi'an Jiaotong University naturally call for the latest, most cutting-edge technology and know-how on both ALD equipment manufacturing and process development. We at Picosun are proud that our four decades' cumulative experience in ALD system design has contributed to this significant leap forwards in graphene manufacturing, paving its way to real, tangible products in e.g. next generation consumer electronics, medical, ICT, and space applications," summarizes Juhana Kostamo, Managing Director of Picosun.
 
"We have used Picosun's Advanced PEALD (plasma-enhanced ALD) system to testify that atomic layer deposition is a viable new technique for the growth of high-quality graphene. More importantly, this work demonstrates the possibility of integration of graphene into semiconductor technologies for possible microelectronic device applications," states Prof. Wei Ren, director of the Electronic Materials Research Laboratory from Xi'an Jiaotong University, Xi'an, China.
 

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